JPH0130310B2 - - Google Patents
Info
- Publication number
- JPH0130310B2 JPH0130310B2 JP57152202A JP15220282A JPH0130310B2 JP H0130310 B2 JPH0130310 B2 JP H0130310B2 JP 57152202 A JP57152202 A JP 57152202A JP 15220282 A JP15220282 A JP 15220282A JP H0130310 B2 JPH0130310 B2 JP H0130310B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- layer
- silicon film
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 25
- 229920005591 polysilicon Polymers 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 229910021332 silicide Inorganic materials 0.000 claims description 16
- 238000000605 extraction Methods 0.000 claims description 15
- 230000003647 oxidation Effects 0.000 claims description 13
- 238000007254 oxidation reaction Methods 0.000 claims description 13
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 2
- 150000003376 silicon Chemical class 0.000 claims 2
- 230000000873 masking effect Effects 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 8
- 238000002955 isolation Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910021074 Pd—Si Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57152202A JPS5940573A (ja) | 1982-08-30 | 1982-08-30 | 半導体集積回路装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57152202A JPS5940573A (ja) | 1982-08-30 | 1982-08-30 | 半導体集積回路装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5940573A JPS5940573A (ja) | 1984-03-06 |
| JPH0130310B2 true JPH0130310B2 (en]) | 1989-06-19 |
Family
ID=15535287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57152202A Granted JPS5940573A (ja) | 1982-08-30 | 1982-08-30 | 半導体集積回路装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5940573A (en]) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6331167A (ja) * | 1986-07-24 | 1988-02-09 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS63188916A (ja) * | 1987-01-31 | 1988-08-04 | Kitamura Kiden Kk | 帯材走行位置制御装置 |
-
1982
- 1982-08-30 JP JP57152202A patent/JPS5940573A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5940573A (ja) | 1984-03-06 |
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